| 摘要 |
<p>PURPOSE:To shorten vacuumizing time by introducing inert gas or simple substance gas of diatomic molecule which does not form reaction product with electrostatic chuck surface material, into a plasma forming chamber, generating plasma, irradiating the electrostatic chuck surface with the plasma, and cleaning the surface. CONSTITUTION:Inert gas like Ar and He or simple substance gas of diatomic molecule like H2, O2 and N2 which does not form reaction product with an electrostatic surface layer usually composed of ceramic is fed from a first introducing system 3, at a flow rate which keeps the gas pressure of an equipment at 1X10<-4>-5X10<-3>Torr. The gas introduced into a plasma forming chamber 5 is effectively turned into plasma in a magnetic flux density region satisfying ECR condition in a high vacuum state. Thereby the plasma flows out from a plasma leading-out window 7 to the inside of the reaction chamber 6 by the effect of the gradient of dispersion magnetic flux density generated by a main magnetic coil 4.</p> |
