发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To reduce power supply noise, by arranging the power supply line of a circuit in which a comparatively high current flows in a short time, in the vicinity of a grounding line so as to be in parallel with it. CONSTITUTION:Power supply lines 5a, 5b are arranged from a power supply pad 4a toward driving circuits DR1 and DR5. Power supply lines 5c, 5d are arranged from a power supply pad 4b toward driving circuits DR2 and DR6. Grounding lines 5e, 5f are arranged from a grounding pad 4e toward the driving circuits DR1, DR2, DE5 and DR6, in the vicinity of the power supply lines 5a, 5b, 5c, 5d so as to be in parallel with them. Similarly, grounding lines 5k, 5l are arranged from a grounding pad 4f toward driving circuits DR3, DR4, DR7 and DR8, in the vicinity of power lines 5g, 5h, 5i, 5j so as to be in parallel with them. Thereby the self-inductances of wirings are cancelled, and parasitic capacitances between lines are operated as by-pass capacitors.</p>
申请公布号 JPH04287360(A) 申请公布日期 1992.10.12
申请号 JP19910075837 申请日期 1991.03.15
申请人 HITACHI LTD 发明人 YAMAGUCHI YASUNORI;OSHIMA KAZUYOSHI;IWAI HIDETOSHI
分类号 H01L21/822;G11C11/401;H01L27/04;H01L27/10 主分类号 H01L21/822
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