| 摘要 |
PURPOSE:To ensure high integration by increasing the capacity of a stack capacitor in a three element/2 bit type FEC-DRAM. CONSTITUTION:A capacitor area is increased by burying a stack capacitor in a trench and forming an electric contact on a element isolation region through a local wiring. Further, the capacitor is extended onto a word line area at need. The surface area of the stack capacitor is increased and capacitance is increased, and thus reduction of the occupied area and high integration of a DRAM are achieved. |
