| 摘要 |
PURPOSE:To decrease the number of transistors by setting or resetting bits in a time equal to the processing time of data writing into a semiconductor memory. CONSTITUTION:Memory driving circuits 23.1-23.4 are used for data writing operation, bit setting operation and bit resetting operation by four bits at every time. From four-bit bus line 24, data are inputted to data lines 21.1-21.4. To memory driving circuits 23, couples of digit lines from semiconductor memory device 8 are connected, and data writing into and bit operation in semiconductor memory cells, consisting of a plurality of bits, connected to the couples of digit lines are carried out. |
