发明名称 Semiconductor integrated circuit with a plurality of gate electrodes.
摘要 A semiconductor integrated circuit with a plurality of gate electrodes (65A, 65B) for implementing a prescribed operation according to first and second control signals consists of an operating region (62A, 62B) with a plurality of devices for implementing the prescribed operation, a plurality of gate electrodes (65A, 65B) positioned on the operating region for respectively applying the first and second control signals to a gate region of the operating region (62A, 62B), a first hard-wire (67A) connected to one group of gate electrodes (65A) and arranged on a side of the operating region (62A, 62B) for transmitting the first control signal to the one group of gate electrodes (65A), and a second hard-wire (67B) connected to the other group of gate electrodes (65B) and arranged on the side opposite the first hard-wire (67A) for transmitting the second control signal to the other group of gate electrodes (65B). <IMAGE>
申请公布号 EP0507077(A2) 申请公布日期 1992.10.07
申请号 EP19920103257 申请日期 1992.02.26
申请人 KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-ELECTRONICS CORPORATION 发明人 NAGASAWA, HIRONORI;NEKOZUKA, KATSUYUKI
分类号 H01L21/822;H01L21/338;H01L23/528;H01L27/04;H01L29/812 主分类号 H01L21/822
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