| 摘要 |
933,430. Making pure indium and gallium, electrolytically. SIEMENS - SCHUCKERTWERKE A.G. June 1, 1962 [June 13, 1961], No. 21338/62. Class 41. Pure gallium and indium are prepared electrolytically using as electrolyte a compound of general formula [Al 2 R 6 X]M, where R is an alkyl radical, X is halogen, and M is alkali metal, ammonium, or preferably a tetra-alkyl N group. The impure Ga or In metal is used as anode and pure metal, e.g. as foil as cathode. In examples, [Al 2 Et 6 Cl]N(CH 3 ) 4 or the equivalent isobutyl compound is heated at 120‹ C., with indium of 99.95% purity as an anode enclosed in a fine-pored linen bag, and 99.999% indium as cathode. Electrolysis is effected at 2 to 5V and C.D. of 1.3A. sq. dm. for several days. The electrolyte is siphoned off and the metal deposit on the cathode after washing in hot benzene, is re-melted under liquid paraffin. |
