| 摘要 |
PURPOSE:To provide a double hetero light emitting diode formed on a p-type InP board allowing less optical absorption by the board without increasing the electric resistance of the board. CONSTITUTION:When a p-type InP board is designated by carrier concentration, the concentration of an An atom becomes too high. Thus, the characteristic of the p-type InP board is designated by the Zn atom concentration, which is 3X10<18>-7X10<18>cm<-3>, and a light emitting diode is formed on the board. The board is suitable for a light emitting diode which permits light to go out through the board. |
