| 摘要 |
An in-line process for determining development rates and other characteristic parameters -- such as layer thickness, contrast, and relative solubility -- during development of PAC-containing photoresist films. The process comprises the steps of: 1) during development, detecting (13) light reflected from films of the photoresist material; 2) generating signals (31) that represent the intensity of the reflected light; 3) fitting sinusoidal functions to the generated signals (33); and 4) using the fitted signals for analyzing (15) characteristic parameters of the photoresist material. |
