Semiconductor device comprising a layered structure grown on a structured substrate

摘要

A semiconductor device such as a laser diode grown on a structured substrate surface having horizontal regions and adjacent inclined sidewall surfaces. The horizontal regions are of standard orientation while the inclined surfaces are misoriented. The layers forming the device are grown on top of a structured surface, with at least the active layer of the semiconductor material assuming an ordered state which depends on the orientation of the substrate surface. The center section of the active layer is deposited on top of a horizontal region. This section is in the ordered state and has a lower bandgap energy than the terminating sections which are grown on the inclined regions and which exhibit a wider bandgap. The active layer can be terminated in either lateral direction with wider bandgap materials so that buried devices can be obtained that provide strongly confined and non-absorbing mirrors.