| 摘要 |
<p>PURPOSE:To provide for method for producing a TFT wherein fluctuation of characteristics, especially of ON current, is suppressed. CONSTITUTION:A semiconductor layer 2 is subjected to patterning on an insulation substrate 21 and then the semiconductor layer 2 is applied, thus forming a gate insulation film 3. A gate electrode 4 with a plurality of gate electrode portions 4a-c is formed on a gate insulation film 3 and then impurity ions are implanted to the semiconductor layer 2 with the gate electrode as a mask, thus forming low-impurity concentration regions 11a and 11b in self-aligned manner. Then, a resist 5 is formed among the gate electrode portions 4a-c and impurity ions are implanted into the semiconductor layer 2 with the gate electrode portion and the resist 5 as a mask, thus forming high-impurity concentration regions 10a and 10b at both outer sides of the gate electrode 4 in a self-aligned manner.</p> |
