| 摘要 |
<p>PURPOSE:To find a new organic iridium compound which can be used for the MOD method and to make the compound easily available and, at the same time, to provided a material for forming resistor films which can be used for forming a uniform resistor film having a large bond strength against substrates and excellent electrical characteristic. CONSTITUTION:This material for forming resistor films is provided as a material to be used for a resistor film forming method which forms resistor films by baking resistor film forming materials applied to substrates. This material is prepared by using iridium benzylidene anthranilate, iridium aliphatic carboxylate Ir(OOCR<2>)3 (R<2>: alkyl group), or iridium dionate Ir(R<4>COCR<3>COR<5>)3 (R<3>: hydrogen atoms or alkyl group, R<4> and R<5>: alkoxyl groups).</p> |
