| 发明名称 |
Method of manufacturing a semiconductor device having a layer with a controlled thickness. |
| 摘要 |
<p>Ultraviolet rays are irradiated on a semiconductor substrate 11 in an oxygen atmosphere. The ultraviolet rays have an energy sufficient for cutting off the bond between oxygen molecules. Ozone produced on the semiconductor substrate forms an oxide film on the outer surface of the semiconductor substrate. By removing the oxide film, the semiconductor substrate is reduced to a desired thickness. <IMAGE></p> |
| 申请公布号 |
EP0506097(A2) |
申请公布日期 |
1992.09.30 |
| 申请号 |
EP19920105327 |
申请日期 |
1992.03.27 |
| 申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
INOKUCHI, KAZUYUKI;IKEDA, MASAHISA |
| 分类号 |
H01L21/302;H01L21/28;H01L21/306;H01L21/316;H01L21/338;H01L21/66;H01L23/58;H01L29/812 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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