| 摘要 |
1. A method of producing diffusion layers on metal or semiconductor surfaces in ion processes of thermal and chemical treatment, which involves locating the items to be treated in an earthed vacuum chamber, connecting those items with negative pole of current source, and treating those items with a gas excited with glow discharge, characterized in that an anode is located in the vacuum chamber (1) inside the field of the cathode being created with the treated items; reactive gas is supplied to the anode vicinity, whereas the electric field potential in the cathode area is controlled with the control electrode located between the anode and the cathode, and that control electrode is connected with a current source with sign control and potential control, while the product of the gas pressure and of the anode-cathode distance is within 0.0001 - 10 m x mm Hg (0.0133 - 1333.22 m x Pa).2. A device for producing diffusion layers on surfaces of metals or semiconductors in ion processes of chemical and thermal treatment, being an earthed vacuum chamber with gas inlet apertures for creating a reactive atmosphere, where treated items are located, and those items are connected with negative pole of the current source, characterized in that inside the vacuum chamber (1), a vessel (3) is located, whose one side is open, and a closed container (5) is located in that open side; one wall of that container includes a connector pipe [à]<IMAGE>
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