MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To increase an integration density and to shorten the time required to complete the manufacturing process of a semiconductor integrated circuit device from a write process at the semiconductor integrated circuit device provided with a vertical-structure mask ROM. CONSTITUTION:At the manufacturing method of said semiconductor integrated circuit device, the following are provided: a process to form MISPET's Q1, Q2 alternately; a process to introduce impurities for information write use into channel formation regions through gate electrodes 10 at the prescribed MISFET's Q1 out of the MISFET's Q1 by using a first mask; and a process to introduce impurities for information write use into channel formation regions through gate electrodes 12 at the prescribed MISFET's Q2 out of the MISFET's Q2 by using a second mask. Said gate electrodes 10 and the gate electrodes 12 are formed respectively to have different impurity transmittances.