GAAS HETEROSTRUCTURE PROVIDED WITH STRESS COMPENSATION LAYER,申请号JP19910332439-传众专利搜索

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发明名称	GAAS HETEROSTRUCTURE PROVIDED WITH STRESS COMPENSATION LAYER
摘要
申请公布号	JPH04268736(A)	申请公布日期	1992.09.24
申请号	JP19910332439	申请日期	1991.11.21
申请人	MOTOROLA INC	发明人	REIMONDO KEI TSUI
分类号	C30B23/08;C30B29/40;H01L21/20;H01L21/338;H01L29/778;H01L29/812	主分类号	C30B23/08
代理机构		代理人
主权项
地址

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