Thermoelectric refrigeration material

摘要

In order to improve the figure of merit Z of a thermoelectric material, bismuth (Bi), antimony (Sb) and silicon monoxide (SiO) are deposited on a substrate 3 at a predetermined rate in a thermally nonequilibrium state by an ion cluster beam method so that a thin film having a granular structure including crystal grains of about one micron is obtained. The figure of merit Z is improved by selectively varying the thermal conductivity K by controlling the amount of SiO in the film. The apparatus includes a Bi source 5, an Sb source 12, and an SiO source (not shown). An ionization unit 7 and a power source 11 accelerate Bi ions to collide with the heated glass substrate 3.