Method and apparatus for producing silicon single crystal.

摘要

A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield, which comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal (28) having a temperature in excess of 1150 DEG C is spaced upwardly from a surface of silicon melt (14) by a distance greater than 280 mm; and pulling the growing silicon single crystal (28) upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus (2) for carrying out the method is also disclosed.