Method of growing silicon monocrystalline rod.

摘要

The present invention is intended to provide a method of growing a silicon monocrystalline rod (3) by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod (3) in the diametrical direction is made microscopically uniform, characterized in that a magnetic field forming means (9) is arranged above and/or below a melting zone (4) of said silicon monocrystalline rod (3) to surround said silicon monocrystalline rod (3) and a magnetic field is applied to the melting zone (4) of the silicon monocrystalline rod (3) through said magnetic forming means (9), and preferably the magnetic field forming means (9) is constituted by supplying a direct electric current through a solenoid coil (9) surrounding said silicon monocrystalline rod (3).