| 摘要 |
PURPOSE:To provide for a semiconductor light-emitting device where a distortion produced at a light-emitting portion is relaxed and bonding failure is reduced without changing a bonding process using a conventional automatic electrode wiring device for a semiconductor light-emitting device with an ohmic contact layer, a barrier layer which is connected to the ohmic contact layer, and a bonding layer which is formed on the barrier layer. CONSTITUTION:In a semiconductor light-emitting device with an ohmic contact layer 8 which is in ohmic contact on a semiconductor substrate 1 around a light-emitting window. a barrier layer 6 which is connected to the ohmic contact layer 8, and a bonding layer 7 which is formed on the barrier layer 6, the ohmic contact layer 8 and the bonding layer 7 are configured so that they do not overlap in vertical direction for a surface of the semiconductor substrate 1. |
