| 摘要 |
This thin film is formed by (1) forming a silicide to reduce the contact resistance and to improve adhesion between the silicon and titanium interface by sputtering titanium element, 1,000-2,500 angstrom thick deposition on the silicon substrate, (2) heat treating in the temperature range of 350-500 deg.C under nitrogen (N2) atmosphere, (3) evaporating lead or lead oxide, (4) bubbling Ti (C2H4O)4 with N2 (nitrogen) gas, (5) heating the substrate constantly, (6) reacting the titanium on the silicon substrate with oxygen (O2) gas. Then high purity lead titanate thin film is obtained.
|
