| 摘要 |
PURPOSE:To prevent aluminum side etching by coating a wafer with a base film under the condition that the edge of the aluminum of the wiring film is not exposed by covering the edge of the wiring film with a protecting film so as not to expose the edge of the wiring film in the peripheral area of the wafer. CONSTITUTION:An aluminum wiring film 3 is patterned on an insulating film 2 provided on the surface of the semiconductor area of a wafer 1. The wiring film 3 in a peripheral area PZ does not reach the periphery 1a of the wafer 1. Then the wafer 1 is coated with the protecting film 4 on the whole plane. At that time, the wiring film 3 is patterned in the position aloof from a periphery 1a, and the edge is always covered with the protecting film 4. The whole plane of the wafer 1 is coated with a bottom base film 5 and a top base film 6. The top base film 6 is etched leaving the top of each window 4a of the protecting film 4 in a chip area. Since the aluminum of the wiring film 3 is completely covered with the protecting film 4 and the bottom base film 5, side etching is prevented. |
