发明名称 In situ composition analysis during growth vapor deposition
摘要 The composition of material being grown by vapor deposition may be analyzed in situ by applying a beam of electrons, from a source such as a RHEED gun, incident at a low angle to the material being grown. The energy levels in the reflected beam may be analyzed by spectroscopy to qualitatively and quantitatively the presence and absence of elements, as well as their ratio, by analysis of the number of electrons at energy levels related to core level transitions representative of specific materials. Such compositional analysis may be used in real time to control the deposition growth process.
申请公布号 US5148025(A) 申请公布日期 1992.09.15
申请号 US19910643523 申请日期 1991.01.18
申请人 AHN, CHANNING C.;ATWATER, HARRY A. 发明人 AHN, CHANNING C.;ATWATER, HARRY A.
分类号 C23C14/54;C30B23/02;C30B25/16;G01N23/20;H01J37/295 主分类号 C23C14/54
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