| 摘要 |
This invention relates to a junction structure in which element isolation regions having different shapes (e.g., isolation regions respectively formed by a trench isolation method and a LOCOS method) for electrically isolating an element region formed on a semiconductor substrate are bonded to each other. A LOCOS isolation region made of an insulator for electrically isolating many circuit elements of an element region formed on a semiconductor substrate is formed. An end portion of the insulating trench isolation region bonded to the LOCOS isolation region is formed to have a sectorial shape. When a side serving as an end portion of the LOCOS isolation region is bonded to tapered sides of the sectorial portion of the trench isolation region to cause the tapered sides to cross and overlap each other, an included angle serving as an angle defined by these isolation regions on the element region is an obtuse angle.
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