| 摘要 |
PURPOSE:To improve integration by providing a second alignment mark formed on a predetermined region except a region formed with a first alignment mark on a semiconductor layer to be rotated at 180 degrees to the first mark and formed in a mirrorinversion. CONSTITUTION:First alignment marks 1001, 1002 are used for a mask alignment at the time of forming an NMOSFET/SOI on an insulating film 2. Second alignment marks 1003, 1004 are used for a mask alignment at the time of forming a PMOSFET/SOI under the film 2. A semiconductor layer is formed on one main surface of the film 2, the marks 1001, 1002 are formed on a predetermined region on the layer, and the marks 1003, 1004 are formed to be rotated at 180 degrees to the marks 1001, 1002 and mirror-inverted on a predetermined region except the region formed with the marks 1001, 1002 on the layer. |
