| 摘要 |
<p>PURPOSE:To increase number of memory cells by providing a sense amplifier corresponding to each of plural nonvolatile semiconductor memory cells selected in multiple. CONSTITUTION:The semiconductor integrated circuit is provided with plural nonvolatile semiconductor memory cells 101-10n selected in multiple, plural sense amplifiers 111-11n corresponding to the memory cells respectively and a logic gate 12 implementing prescribed logic processing to an output of the sense amplifier. When all of EPROM cells are written and they are selected in multiple, a condition of Ith>Isw is satisfied in each of the sense amplifiers 111-11n. enough to obtain an output of an H level, where Ith is a threshold current flowing to the sense amplifiers 111-11n and Isw is a drain-source current of the EPROM cell when it is written.</p> |
