发明名称 APPARATUS AND METHOD FOR ANALIZING CRYSTAL GROWING STEP AND EVALUATING APPARATUS THEREOF
摘要 PURPOSE:To obtain the data of the atomic layer of the outermost surface of a growing crystal by attaching an electron energy analyzer which can detect photoelectrons of the surface of solid at a specified angle so that a specified vacuum degree is maintained. CONSTITUTION:Emitted light 1 whose energy can be varied is introduced into a crystal growing device and cast on the surface of a solid sample 2 whose crystal is growing. A molecular beam is applied on the surface of the sample 2 from a crystal growing vapor deposition source 5, and the crystal growing in the order of an atomic layer is performed. Photoelectrons 6 discharged from the surface of the sample 2 are detected with an electron energy analyzer 8 having the angle decomposing function at an angle which is close to the surface. The detected spectral light is accumulated in a data memory device 11 through a photoelectron-measurement control device 10. After the end of the measurement, the spectra are overlapped and displayed on a CRT display 12. At this timer an orifice and a differential exhausting system are provided in order to maintain the difference in vacuum degrees in the analyzing chamber and the analyzer 8.
申请公布号 JPH04256832(A) 申请公布日期 1992.09.11
申请号 JP19910018728 申请日期 1991.02.12
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 OSHIMA MASAHARU;MAEDA FUMIHIKO;MURAMATSU YASUSHI
分类号 G01N21/00;G01N23/225 主分类号 G01N21/00
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