发明名称 |
APPARATUS AND METHOD FOR ANALIZING CRYSTAL GROWING STEP AND EVALUATING APPARATUS THEREOF |
摘要 |
PURPOSE:To obtain the data of the atomic layer of the outermost surface of a growing crystal by attaching an electron energy analyzer which can detect photoelectrons of the surface of solid at a specified angle so that a specified vacuum degree is maintained. CONSTITUTION:Emitted light 1 whose energy can be varied is introduced into a crystal growing device and cast on the surface of a solid sample 2 whose crystal is growing. A molecular beam is applied on the surface of the sample 2 from a crystal growing vapor deposition source 5, and the crystal growing in the order of an atomic layer is performed. Photoelectrons 6 discharged from the surface of the sample 2 are detected with an electron energy analyzer 8 having the angle decomposing function at an angle which is close to the surface. The detected spectral light is accumulated in a data memory device 11 through a photoelectron-measurement control device 10. After the end of the measurement, the spectra are overlapped and displayed on a CRT display 12. At this timer an orifice and a differential exhausting system are provided in order to maintain the difference in vacuum degrees in the analyzing chamber and the analyzer 8. |
申请公布号 |
JPH04256832(A) |
申请公布日期 |
1992.09.11 |
申请号 |
JP19910018728 |
申请日期 |
1991.02.12 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
OSHIMA MASAHARU;MAEDA FUMIHIKO;MURAMATSU YASUSHI |
分类号 |
G01N21/00;G01N23/225 |
主分类号 |
G01N21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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