| 摘要 |
<p>PURPOSE:To switch CMS output and high withstand voltage N channel open drain output after the completion of a product. CONSTITUTION:A diode 10 is formed by providing a P type area between the back gate terminal 7 and the N channel area of a P channel MOSFET to constitute an output circuit. Besides, the gate and the drain of the P channel MOSFET for output are connected by the source terminal and the drain terminal of the P channel MOSFET whose back gate terminal and gate terminal are connected to power supply. At the time of the open drain output, when the voltage of an output terminal 12 becomes higher than the supply voltage, route between the gate and the drain of the P channel MOSFET for output becomes conductive, and a current is prevented from flowing in to the power supply side. On the other hand, when the voltage of the output terminal 12 becomes lower than the supply voltage, the route between the gate and the drain of the P channel MOSFET for output is cut off, and the P channel MOSFET for output is prevented from being turned on.</p> |
