| 摘要 |
<p>PURPOSE:To provide a sense amplifier circuit that performs without malfunction under power supply fluctuation in regard to the current detecting sense amplifier circuit for read-only memory CONSTITUTION:In the current detecting sense amplifier circuit for the read-only memory whose circuit is provided with a MOS transistor 12 connected serially with a memory cell, its load 10, a voltage discriminating circuit 16 which discriminates a potential at the connection between the MOS transistor and the load, and an inverter 18 which inverts and adds a potential on the side of the above memory cell to the gate of the MOS transistor, a voltage stabilizing circuit 20 is provided on the side of the power supply of the inverter. Thus, the power supply of the inverter 18 is stabilized, and the malfunction of the sense amplifier which is caused by the fluctuation of the memory power supply is prevented.</p> |
