Semiconductor memory with substrate voltage generating circuit for removing unwanted substrate current during precharge cycle memory mode of operation

摘要

A semiconductor memory device having a substrate voltage production circuit comprises a time delay circuit. The time delay circuit of the present invention has a simple construction and is provided to facilitate removal of an unwanted substrate current ISUB existing during a precharge cycle of memory operation. The substrate voltage production circuit requires no additional regulating signals for operation. Latch-up conditions commonly caused by such unwanted substrate currents are eliminated and stable semiconductor memory device operation is achieved.