| 摘要 |
PURPOSE:To increase the capacity element of charge accumulated level in the title semiconductor integrated circuit device having said capacity element CONSTITUTION:Within the title semiconductor integrated circuit device having a DRAM using the series circuit comprising a data accumulating capacity element C adopting the STC structure comprising one electrode 12, a dielectric film 14 and the other electrode 16 respectively laminated and a memory cell selecting MISFET Qn as a memory cell, at least either one out of one electrode 12 and the other electrode 16 of the data accumulating capacity element C of said memory cell is composed of a semiconductor (polycrystal silicon film) while a metallic film 13 or metallic siliside film 15 is formed between one electrode 12 and the other electrode 16 composed of this semiconductor and the dielectric film 14. |
