| 摘要 |
PURPOSE:To prevent generation of foreign matters by reaction of processing gases within the injector by providing a means for supplying a perge fluidity to the injector wall in the heat processing apparatus where an injector for supply of processing gas is inserted to the heat processing part. CONSTITUTION:A reaction apparatus for low pressure silicon nitride deposition comprises an outer tube 1, an inner tube 2, a heater 3 which is provided at the external circumference of tube 1 and heats the reaction area 4 within the tube 4 up to a hight temperature, a flange which is sealingly coupled with the entrance side of tube 1 through a sealing ring 5 and a cover 8 which hermetically seals the entrance together with the sealing ring 7, and injectors 9, 10 which supply, for example, SiH2Cl2 and NH3 as the reaction gases to the reaction area 4. A perge fluidity supply tube 11 which covers the injector 9 in such a way as forming the double tube structure is provided at the external circumference of injector 9. The nitrogen gas, for example, is supplied to the supply tube 11 to control temperature within the injector 9 to the specified range and thereby generation of foreign matter by reaction of gases within the injector can be prevented. |
