| 摘要 |
A process for selectively depositing a series of indium phosphide layers 7 on a substrate comprises using a gas including an indium-organic gas such as an indium trialkyl, a phosphorus source such as phosphine and an organic halide such as trichloroethane. The layers form an isolation region or planarization for an InP laser 1-4. The organic halide decomposes to release halogen at about the same temperature that the indium-organic precursor decomposes. The laser comprises reactive ion etched mesa stripes coated with SiO2 on which, due to the use of the organic halide, layers 7 do not grow. The SiO2 layer is removed before growing InP and InGaAs layers of the laser structure. <IMAGE> |
