| 发明名称 |
Semiconductor laser device having reflectance control film formed on end facet of oscillator |
| 摘要 |
A reflectance control film is formed on the end facet of an oscillator in a semiconductor laser device. The reflectance control film has a laminated structure of a first thin film formed on the end facet of the oscillator and a second thin film formed on the first thin film. The film thickness of the first thin film is set to be " lambda /4n1" and n1</=1.8 where the peak wavelength of the oscillator is lambda and the refractive index of the first thin film is n1. The film thickness of the second thin film is set to be " lambda /4n2" and 1.9</=n2</=2.6 where the peak wavelength of the oscillator is lambda and the refractive index of the second thin film is n2.
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| 申请公布号 |
US5144635(A) |
申请公布日期 |
1992.09.01 |
| 申请号 |
US19910717322 |
申请日期 |
1991.06.18 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUHARA, HAJIME |
| 分类号 |
H01S3/08;H01S5/00;H01S5/028;H01S5/042;H01S5/10 |
主分类号 |
H01S3/08 |
| 代理机构 |
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