| 摘要 |
A compound semiconductor device includes a semi-insulating substrate having a mesa structure defined by recess-etched portions along each side. A collector layer, base layer, emitter layer, and an emitter contact layer are formed sequentially on the recess-etched portions and on the mesa structure. As a result, the collector layer of the mesa structure and the emitter contact layer of the recess portions are horizontally self-aligned to form a collector. Further, the base layer of the mesa structure and a base contact layer formed on the emitter contact layer of the recess portions are horizontally self-aligned to form a base.
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