| 摘要 |
<p>PURPOSE:To improve the yield and quality in element separation of a thin film transistor by forming a pattern in a gate electrode and anode-oxidizing its surface, and anode-oxidizing exposed parts of source and drain electrodes. CONSTITUTION:A source electrode 13, a drain electrode 14 and an image element electrode 19 comprising laminated films of a transparent conductive film 190 and an oxidized film formed metal layer 134 are formed on a transparent substrate 11 in patterns. At least one layer of an action semiconductor layer 15, a gate insulation layer 16 and a gate electrode layer 120 is formed covering the electrodes, and element separation of a thin film transistor is performed by etching and the oxidized film formed metal layer 134 in exposed parts of the source electrode 13 and the drain electrode 14 and a range of the image electrode 19 is anode oxidized. If an exposed end part of the gate electrode 12 and the source electrode 13 and the drain electrode 14 are very close to each other, possibility of generating a leak current is eliminated.</p> |
