PHOTOELECTRONIC MEMORY DEVICE

摘要

PURPOSE:To selectively turn on optically bistable elements arranged in a two-dimensional array shape by using an electric signal without using the breakdown characteristic of the optically bistable elements. CONSTITUTION:Memory cells 23 which include the following are arranged on a semiconductor substrate in a two-dimensional array shape: optically bistable elements 1 in which light-emitting elements 19 and phototransistors 20 have been connected in series; and bipolar transistors 22 which have been connected in parallel to the phototransistors 20. Anodes at the optically bistable elements 21 included in the memory cells 23 which are adjacent in the transverse direction are connected by using word lines 24. Bases at the bipolar transistors 22 included in the memory cells 23 which are adjacent in the longitudinal direction are connected by using bit lines 25. The potential of the bases at the bipolar transistors 22 and the potential of the anodes at the optically bistable elements 21 are raised together, and a write operation is performed.