Photovoltaic device with layer region containing germanium therein.

摘要

A photovoltaic device having a semiconductor body with a pin junction, with reduced time-dependent deterioration, high reliability and a high photoelectric conversion efficiency is disclosed. An i-type semiconductor layer constituting the semiconductor body is composed of a layer region containing germanium and a layers region not containing germanium. The layer region not containing germanium is provided at least at the side of a p-semiconductor layer. The maximum composition ratio of germanium in the layer region containing amorphous silicon and germanium is within a range from 20 to 70 at. %, and the composition ratio of germanium in the above-mentioned layer region containing amorphous silicon and germanium is zero at the side of an n-semiconductor layer and increases toward the side of the p-semiconductor layer, with a rate of increase larger at the side of n-semiconductor layer than at the side of p-semiconductor layer, and the composition ratio of germanium at the center of layer thickness is at least equal to 75 at. % of the maximum composition ratio of germanium.