Enhanced conductivity quantum well structure having resonant interface phonon induced charge coupling

摘要

An enhanced conductivity structure comprising first and second coupled quantum well channel layers spaced from each other by a barrier layer of predetermined thickness is provided. The barrier layer and other supporting layers comprise a first material type, while the first and second quantum wells comprise a second material type having a narrower bandgap than the first material type. Each of the quantum wells is thin to confine current flow to the plane of the quantum wells. First and second spacer layers of the first material type are formed adjacent to each of the quantum wells, and planar doping layers are provided on each of the spacer layers. First and second buffer layers of the first material type are formed adjacent to each of the spacer layers.