POSITIVE TYPE ELECTRON BEAM RESIST

摘要

PURPOSE:To obtain the positive type electron beam resist which has a high sensitivity and good dry etching resistance. CONSTITUTION:This resists consists essentially of the alpha-cyanoacrylic ester-alpha- methyl styrene expressed by formula I. In the formula I, R denotes a 6 to 8C chain or cyclic alkyl group. The copolymn. ratio m/n of the alpha-cyanoacrylic ester alpha-methyl styrene is preferably 3/7 to 7/3 and the mol. wt. is preferably 10000 to 3000000, more particularly preferably 100000 to 1000000.