| 摘要 |
PURPOSE: To provide a manufacturing method of a DRAM cell, wherein mutual connection between a cell capacitor and an access transistor are self-aligned in the course of the manufacturing process. CONSTITUTION: A method for manufacturing a DRAM cell 10, containing an FET transistor 22 and a capacitor 28 on a single-crystal substrate 30, consists of the following: a process for forming a trench capacitor 28 on a substrate 30, a process for forming a mesa region, a process for forming a channel to the capacitor, a process for sticking a semiconductor layer on the mesa region and the channel, a process for selectively eliminating the semiconductor layer, and a process for forming a gate structure 38, a source region 20 and a drain region 24. |
