发明名称 DEPOSITION OF THALLIUM OXIDE FOR CONTROLLED THALLIUM SUPERCONDUCTOR FILM, AND CONSTITUTION OF REACTOR
摘要 <p>PURPOSE: To manufacture a thallium and copper oxide-based high-temperature superconducting film on various substrates by providing a container having a large cavity for containing a substrate and a film, and providing this container with an opening part through which thallium can pass. CONSTITUTION: The container having a cavity 20 which is sufficiently large to contain a substrate and film is provided as the container of a reactor 10. The container has an opening part through which thallium can pass. For example, the reactor 10 is equipped with a top plate 12 and a base plate 14 which function as a susceptor. These plates 12 and 14 function as reproducible reactive substances, which are effective for controlling of the deposition temperature in a heat treatment and give a temperature gradient between a coating film 22 and a deposited film 16 which face it. Further, the cavity 20 is surrounded with a cap plate 22 and a spacer foil. Consequently, the thallium and copper oxide-based high-temperature superconducting film can be manufactured on various substrates.</p>
申请公布号 JPH04229669(A) 申请公布日期 1992.08.19
申请号 JP19910097617 申请日期 1991.04.26
申请人 SUUPAAKONDAKUTAA TEKUNOROJIIZU INC 发明人 MAIKERU MAATEIN EDEII;UIRIAMU REBIN ORUSON;TEIMOSHII UORUTON JIEIMUZU
分类号 C01G1/00;C01G15/00;C23C14/08;C23C14/34;C23C14/54;C23C14/58;C30B11/00;C30B23/02;C30B33/00;F27B17/00;H01L39/14;H01L39/24;H01P1/203 主分类号 C01G1/00
代理机构 代理人
主权项
地址