| 摘要 |
A process for growing III to V compound semiconductors containing arsenic and phosphorus, particularly a mixed crystal of InGaAsP, on a substrate by vapor phase epitaxy from a starting gas mixture comprising AsH3 or H2AsCnH2n+1 (wherein n is 1, 2 or 3) as the arsenic source, H2PC4H9 as the phosphorus source, and a group III element source. A mixed crystal free from any unevenness in the distribution of composition can be grown on the substrate, because there is no difference in the thermal decomposition temperature between AsH3 or H2AsCnH2n+1 and H2PC4H9. |
