MOS TRANSISTOR CIRCUIT WITH BREAKDOWN PROTECTION,申请号EP19850102557-传众专利搜索

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发明名称	MOS TRANSISTOR CIRCUIT WITH BREAKDOWN PROTECTION
摘要
申请公布号	EP0172305(B1)	申请公布日期	1992.08.19
申请号	EP19850102557	申请日期	1981.06.17
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	ASANO, MASAMICHI;IWAHASHI, HIROSHI;KOBAYASHI, ICHIRO
分类号	H03F1/52;H01L27/02;H01L27/06;H01L29/78;H02H7/20;H03F1/42;H03K17/0812;H03K19/00;H03K19/003	主分类号	H03F1/52
代理机构		代理人
主权项
地址

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