TRANSISTOR DEVICE PROVIDED WITH INCREASED BREAKDOWN VOLTAGE, ITS MANUFACTURE

摘要

PURPOSE: To provide a bipolar lateral device having high BVcco. CONSTITUTION: A device is formed according to a single polysilicon process. In one application example, a silicide is excluded from the surface of an N+- doped polysilicon 27, which protects an N-base width region 27a of the device, while as a result the obtained device has BVcco 8-10V. In another application example, a silicide is excluded from the surface of a polysilicon 27' which protects an N-base width region 21, while the polysilicon is maintained as a true polysilicon. As a result obtained device comprises BVcco about 20V. The device is a sufficient voltage clamping device for a programmable logic circuit which must be resistant against collector/emitter inverse bias voltage, for programming either a vertical fuse device or a lateral fuse device.