METHOD CONNECTING LOW RESISTOR CONDUCT- ING FILM WITH SILICON FILM AND DEVICE THEREOF

摘要

PURPOSE: To evenly coat a fire-resistant metal on an N-type and a P-type silicon regions by coating the fire-resistant metal on the surface of silicon by chemical vapor-deposition(CVD) system in which heating is made by radiation. CONSTITUTION: Before N-type and P-type regions 2 and 3 reach a temperature about 100 deg.C, optically opaque fire-resistant metal films 90 and 120 (thickness: 100-150Å) are coated on the N-type and P-type silicon regions 2 and 3 by CVD method. With opaque fire-resistance metal films 90 and 120 thus formed, the radiation coefficient of the N-type and P-type regions 2 and 3, even at high processing temperature, is provided by radiation coefficient of the fire-resistant metals 90 and 120. Thus, the fire-resistant metals 90 and 120 are coated on both the N-type and P-type silicon regions 2 and 3 at approximately an equal coating speed. Thus, on both the exposed N-type and P-type silicon regions 2 and 3, the fire-resistant metals 90 and 120 are evenly coated.