| 摘要 |
PURPOSE: To provide readily realized DRAM's having advantages of both a cross point memory cell open bit line method and a folded bit line method, by a method wherein there is provided means for transferring a vertical stack of a pair of real and supplemental bit lines formed of a two-layer metal film. CONSTITUTION: This embodiment comprises: an array 10 of a cross point memory cell forming a matrix; a plurality of word lines 12 connecting with memory cells 18, 18' of a column; a plurality of bit lines 14 connecting with the memory cells 18, 18' of a row which are composed of pairs of real and supplemental bit lines BL, BLN each of which is stacked vertically as first and second layers of a metal film, one of which is connected to the memory cells 18, 18' of each column; means 22 for transferring a stack of each pair so that the bit lines BL, BLN of each pair are located respectively at second and first layers; and a sense amplifier 20 connecting with each pair. |
