| 摘要 |
PURPOSE:To obtain a photoconductive material superior in electrical, optical, photoconductive characteristics, and operation environment adaptability, by providing an amorphous material layer contg. Si and nonuniformly distributed Ge, and an amorphous material layer contg. Si on a substrate in this order. CONSTITUTION:A photoconductive material 100 is obtained by forming an amorphous material 102 on its substrate 101, and this layer 102 has a free surface 105 on the other side. The layer 102 has a layer structure of the first layer region (G)103 composed of a-Si(H, X) contg. Ge located on the side of the substrate 101, and the second photoconductive layer region (S)104 laminated on the region (G)103. The region (G)103 contains Ge in a distribution continuous in the layer thickness direction rich on the side of the substrate 101, and poor in the reverse direction. |
