| 发明名称 |
Method for producing a semi conductor device using sputtering. |
| 摘要 |
<p>A method for producing a semiconductor device for forming an electrode or an electrode wiring by forming a tantalum thin film by sputtering is provided. In this method, a krypton gas in which nitrogen is mixed as a reactive gas is used as a sputtering gas, and a product of the pressure of the sputtering gas and a target-substrate distance is set in the range of 0.01 m.Pa to 0.08 m.Pa. <IMAGE></p> |
| 申请公布号 |
EP0498663(A2) |
申请公布日期 |
1992.08.12 |
| 申请号 |
EP19920301042 |
申请日期 |
1992.02.07 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SHIMADA, YASUNORI;MORIMOTO, HIROSHI |
| 分类号 |
H01L21/28;C23C14/14;C23C14/34;H01L21/203;H01L21/285;H01L21/336;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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