| 摘要 |
<p>PURPOSE:To keep uniform the thickness of a resistance film to improve the yield of a thin film resistor by forming an insulating film in the double-layer structure of a first layer insulating film and a second layer insulating film formed by alumina. CONSTITUTION:A first layer insulating film 1a consisting of silicon nitride is formed, by the PE-CVD method, on the surface of a semiconductor substrate 2 consisting of gallium arsenic. Next, a second insulating film 1b consisting of alumina having good thermal conduction characteristic is formed by the vacuum deposition or sputtering method to obtain a double-layer structure of the insulating film. Thereafter, a resistance film is formed by the patterning and electrodes 4 are formed riding on the second insulating film 1b from the end portion of the resistance film 3. Thereby, etching up to the insulating film is prevented at the time of patterning the resistance film, thickness of resistance film is kept uniform, desired resistance value can be obtained and the manufacturing yield can be improved.</p> |
