发明名称 LIMITER CIRCUIT HAVING FIELD EFFECT TRANSISTOR
摘要 PURPOSE: To provide a limiter circuit using a field effect transistor in which inserted phase change resulting from the field effect transistor operating in a saturated state can be minimized. CONSTITUTION: This is a limiter circuit having a field effect transistor constituted of two constant voltage supply sources, that is, a bias circuit 11 for a gate and a bias circuit 12 for a drain. A resistant load Rg is serially connected with the supply source for the gate of the transistor. This circuit can be applied especially to space communication.
申请公布号 JPH04220807(A) 申请公布日期 1992.08.11
申请号 JP19910075726 申请日期 1991.03.15
申请人 ALCATEL THOMSON ESPACE 发明人 MITSUSHIERU PUISEGIYUURU;TEIERII PARA;MITSUSHIERU GAIRARU;JIYATSUKU GURAFUYUIRU;JIYANNFURANSOWA SOTOURO
分类号 H03G11/00 主分类号 H03G11/00
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